| 制造商 | 部件名 | 数据表 | 功能描述 |
 Advanced Power Electron... |
30G120ASW
|
103Kb/4P |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
|
|
30G120ASW
|
103Kb/4P |
High Speed Switching
|
 Vishay Siliconix |
30G2C000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
|
30G4B000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
|
30G4C000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
|
30G7B000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
|
30GD1000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
 Kyocera Kinseki Corpota... |
30GDA40
|
757Kb/6P |
Rectifier Diode
|
|
30GDA60
|
756Kb/6P |
Rectifier Diode
|
 Vishay Siliconix |
30GF1000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |
 Kyocera Kinseki Corpota... |
30GFA20
|
754Kb/6P |
Fast Recovery Diode
|
 Nihon Inter Electronics... |
30GFA20
|
530Kb/2P |
Fast Recovery Diode
|
 National Instruments Co... |
30GFA20
|
530Kb/2P |
Fast Recovery Diode
|
|
30GFA20_2015
|
530Kb/2P |
Fast Recovery Diode
|
 Kyocera Kinseki Corpota... |
30GFA40
|
748Kb/6P |
Fast Recovery Diode
|
 Nihon Inter Electronics... |
30GFA40
|
538Kb/2P |
Fast Recovery Diode
|
 National Instruments Co... |
30GFA40
|
538Kb/2P |
Fast Recovery Diode
|
|
30GFA40_2015
|
538Kb/2P |
Fast Recovery Diode
|
 Kyocera Kinseki Corpota... |
30GFB60
|
850Kb/6P |
Fast Recovery Diode
|
 Vishay Siliconix |
30GFC000
|
133Kb/7P |
Axial Vitreous Leaded Wirewound Resistors
28-Mar-17 |