| 制造商 | 部件名 | 数据表 | 功能描述 |
 PHOENIX CONTACT |
1051058-R
|
43Kb/2P |
Marker for terminal blocks - ZB 6,LGS:GROSSBUCHSTABEN R
|
 M-System Co.,Ltd. |
10BXC-18-R
|
249Kb/7P |
High-density Signal Conditioners 10-RACK
|
|
10BXC-28-R
|
249Kb/7P |
High-density Signal Conditioners 10-RACK
|
 Unisonic Technologies |
10NN15G-S08-R
|
201Kb/3P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
10NN15L-S08-R
|
151Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 List of Unclassifed Man... |
11008-R
|
401Kb/1P |
TEST JACKS
|
 Vishay Siliconix |
125LD68-R
|
171Kb/7P |
EMI Suppression Capacitor, Ceramic Disc, Class X1, 400 VAC, Class Y4, 125 VAC
23-Jul-2021 |
|
125LS18-R
|
171Kb/7P |
EMI Suppression Capacitor, Ceramic Disc, Class X1, 400 VAC, Class Y4, 125 VAC
23-Jul-2021 |
 SHENZHEN DOINGTER SEMIC... |
12N10G-S08-R
|
1Mb/6P |
N-Channel MOSFET uses advanced trench technology
|
 Unisonic Technologies |
12NN10G-S08-R
|
176Kb/3P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
12NN10G-S08-R
|
160Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
12NN10L-S08-R
|
160Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
12P10G-S08-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
12P10G-S08-R
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
 Unisonic Technologies |
12P10L-S08-R
|
289Kb/7P |
P-CHANNEL POWER MOSFET
|
|
15600G-S08-R
|
164Kb/6P |
MELODY IC
|
|
15600G-S08-R
|
171Kb/6P |
MELODY IC
|
|
15600L-S08-R
|
164Kb/6P |
MELODY IC
|
|
15N06G-S08-R
|
271Kb/7P |
N-CHANNEL POWER MOSFET
|
|
15N06G-S08-R
|
245Kb/6P |
15A, 60V N-CHANNEL POWER MOSFET
|