| 制造商 | 部件名 | 数据表 | 功能描述 |
HuaXinAn Electronics CO... |
AP4400A
|
493Kb/12P |
Ultra Low Power Voltage Detector
|
Asahi Kasei Microsystem... |
AP4400A
|
490Kb/12P |
Ultra Low Power Voltage Detector
|
|
AP4400AEC
|
363Kb/11P |
Ultra Low Power Voltage Detector
|
A POWER MICROELECTRONIC... |
AP4402A
|
653Kb/7P |
20V N-Channel Enhancement Mode MOSFET
REV1.0 |
Advanced Power Electron... |
AP4405GM
|
222Kb/5P |
Simple Drive Requirement, Lower On-resistance
|
|
AP4405GM
|
103Kb/4P |
Simple Drive Requirement
|
A POWER MICROELECTRONIC... |
AP4406A
|
1Mb/6P |
30V N-Channel Enhancement Mode MOSFET
|
|
AP4406B
|
1Mb/7P |
30V N-Channel Enhancement Mode MOSFET
|
|
AP4407A
|
2Mb/7P |
30V P-Channel Enhancement Mode MOSFET
|
|
AP4407B
|
1Mb/9P |
30V P-Channel Enhancement Mode MOSFET
|
Advanced Power Electron... |
AP4407F
|
80Kb/4P |
P-CHANNEL ENHANCEMENT MODE
|
|
AP4407GM
|
72Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
VBsemi Electronics Co.,... |
AP4407GM
|
996Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Advanced Power Electron... |
AP4407GM-HF
|
213Kb/5P |
Simple Drive Requirement, Low On-resistance
|
VBsemi Electronics Co.,... |
AP4407GM-HF
|
996Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP4407GM-HF
|
1,001Kb/5P |
P-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP4407GM-HF
|
213Kb/5P |
Simple Drive Requirement
|
|
AP4407GM-HF
|
57Kb/5P |
Simple Drive Requirement
|
|
AP4407GP
|
223Kb/6P |
Lower On-resistance, Simple Drive Requirement
|
|
AP4407GP-HF
|
59Kb/5P |
Simple Drive Requirement
|
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