| 制造商 | 部件名 | 数据表 | 功能描述 |
 A POWER MICROELECTRONIC... |
AP4435A
|
2Mb/9P |
30V P-Channel Enhancement Mode MOSFET
|
|
AP4435C
|
831Kb/7P |
-30V P-Channel Enhancement Mode MOSFET
REV1.0 |
 Advanced Power Electron... |
AP4435D
|
69Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4435GH-HF
|
109Kb/5P |
Fast Switching Characteristic
|
|
AP4435GH-HF
|
106Kb/4P |
Simple Drive Requirement, Lower On-resistance
|
|
AP4435GH-HF
|
106Kb/4P |
Simple Drive Requirement
|
|
AP4435GH-HF
|
109Kb/5P |
Fast Switching Characteristic
|
 VBsemi Electronics Co.,... |
AP4435GJ
|
971Kb/8P |
P-Channel 30-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP4435GJ-HF
|
109Kb/5P |
Fast Switching Characteristic
|
|
AP4435GJ-HF
|
106Kb/4P |
Simple Drive Requirement, Lower On-resistance
|
|
AP4435GJ-HF
|
106Kb/4P |
Simple Drive Requirement
|
 VBsemi Electronics Co.,... |
AP4435GM
|
1,002Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP4435GM
|
202Kb/5P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
AP4435GM-HF
|
538Kb/4P |
P-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP4435GM-HF
|
208Kb/5P |
Simple Drive Requirement, Low On-resistance
|
|
AP4435GM-HF
|
208Kb/5P |
Simple Drive Requirement
|
|
AP4435GM-HF
|
103Kb/5P |
Fast Switching Characteristic
|
|
AP4435GYT-HF
|
101Kb/4P |
Simple Drive Requirement, Small Size & Lower Profile
|
|
AP4435GYT-HF
|
101Kb/4P |
Simple Drive Requirement
|
|
AP4435GYT-HF
|
65Kb/5P |
Simple Drive Requirement
|