| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
BSZ060NE2LS
|
1Mb/11P |
n-Channel Power MOSFET
V 2.0, 2011-03-08 |
|
BSZ060NE2LS
|
33Kb/1P |
Material Content Data Sheet
14. August 2015 |
|
BSZ060NE2LS
|
33Kb/1P |
Material Content Data Sheet
14. August 2015 |
|
BSZ063N04LS6
|
1Mb/11P |
OptiMOS 6 Power-Transistor,40V
Rev.2.1, 2021-04-27 |
|
BSZ063N04LS6
|
1Mb/11P |
OptiMOSTM6Power-Transistor,40V
Rev.2.0,2018-06-04 |
|
BSZ063N04LS6ATMA1
|
1Mb/11P |
OptiMOSTM6Power-Transistor,40V
Rev.2.0,2018-06-04 |
|
BSZ065N03LS
|
1Mb/11P |
n-Channel Power MOSFET
2.1, 2011-09-21 |
|
BSZ065N06LS5
|
1Mb/11P |
OptiMOSTM Power-Transistor, 60 V
Rev.2.2,2016-08-10 |
|
BSZ068N06NS
|
697Kb/9P |
OptiMOSTM Power-Transistor
Rev.2.0 2013-10-17 |
|
BSZ009NE2LS5
|
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V
Rev.2.1,2020-05-12 |
|
BSZ010NE2LS5
|
1Mb/11P |
OptiMOSTM 5 Power-Transistor, 25 V
Rev.2.2,2020-05-12 |
|
BSZ011NE2LS5I
|
1Mb/11P |
OptiMOSTM5 Power-Transistor, 25 V
Rev.2.1,2020-10-23 |
|
BSZ013NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
|
BSZ013NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
|
BSZ014NE2LS5IF
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.1,2015-04-27 |
|
BSZ014NE2LS5IF
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.1,2015-04-27 |
|
BSZ017NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
|
BSZ017NE2LS5I
|
1Mb/12P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
|
BSZ018N04LS6
|
1Mb/11P |
OptiMOSTM 6 Power-Transistor, 40 V
Rev.2.1,2020-03-31 |
|
BSZ018NE2LS
|
1Mb/11P |
n-Channel Power MOSFET
V2.0, 2011-03-29 |