| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
BYV40E
|
44Kb/6P |
Rectifier diodes ultrafast, rugged
September 1998 Rev 1.300 |
 WeEn Semiconductors |
BYV40E
|
314Kb/8P |
Rectifier diodes ultrafast, rugged
|
 NXP Semiconductors |
BYV40E-150
|
44Kb/6P |
Rectifier diodes ultrafast, rugged
September 1998 Rev 1.300 |
|
BYV40E-200
|
44Kb/6P |
Rectifier diodes ultrafast, rugged
September 1998 Rev 1.300 |
|
BYV40E
|
120Kb/8P |
Rectifier diodes ultrafast, rugged
September 1998 |
 WeEn Semiconductors |
BYV40W-600P
|
350Kb/10P |
Ultrafast power diode
|
 Inchange Semiconductor ... |
BYV40W-600P
|
282Kb/2P |
Ultrafast Rectifier Diode
|
 NXP Semiconductors |
BYV410-600
|
150Kb/10P |
Enhanced ultrafast dual rectifier diode
Rev. 01-29 June 2009 |
 WeEn Semiconductors |
BYV410-600
|
221Kb/10P |
Dual enhanced ultrafast power diode
|
 Inchange Semiconductor ... |
BYV410-600
|
350Kb/2P |
Ultrafast Power Diode
|
 WeEn Semiconductors |
BYV410-600P
|
415Kb/10P |
Dual ultrafast power diode
|
|
BYV410-600PQ
|
415Kb/10P |
Dual ultrafast power diode
|
 NXP Semiconductors |
BYV410-600
|
196Kb/11P |
Dual enhanced ultrafast power diode
Rev. 2-5 August 2011 |
|
BYV4100
|
52Kb/8P |
Fast soft-recovery controlled avalanche rectifier
1996 Oct 07 |
|
BYV410X-600
|
153Kb/10P |
Enhanced ultrafast dual rectifier diode
Rev. 01-29 June 2009 |
 WeEn Semiconductors |
BYV410X-600
|
1Mb/11P |
Dual enhanced ultrafast power diode
|
 Inchange Semiconductor ... |
BYV410X-600
|
301Kb/2P |
Ultrafast Power Diode
|
 WeEn Semiconductors |
BYV410X-600P
|
525Kb/10P |
Dual ultrafast power diodes
|
 NXP Semiconductors |
BYV410X-600
|
153Kb/10P |
Enhanced ultrafast dual rectifier diode
Rev. 01-29 June 2009 |
 WeEn Semiconductors |
BYV415J-600P
|
366Kb/10P |
Dual ultrafast power diode
|