| 制造商 | 部件名 | 数据表 | 功能描述 |
Unisonic Technologies |
02N06ZG-AL3-R
|
168Kb/4P |
0.2A, 60V SILICON N-CHANNEL MOSFET
|
|
1N4148G-AL3-R
|
218Kb/4P |
HIGH-SPEED SWITCHING DIODE
|
|
1N4148G-AL3-R
|
320Kb/5P |
HIGH-SPEED SWITCHING DIODE
|
|
1N4148G-AL3-R
|
298Kb/4P |
HIGH-SPEED SWITCHING DIODE
|
|
2N7002KWG-AL3-R
|
203Kb/4P |
N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
2N7002WG-AL3-R
|
158Kb/3P |
300m Amps, 60 Volts N-CHANNEL POWER MOSFET
|
|
2N7002WG-AL3-R
|
158Kb/3P |
300mA, 60V N-CHANNEL POWER MOSFET
|
|
2N7002WG-AL3-R
|
179Kb/3P |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING
|
|
2N7002ZWG-AL3-R
|
164Kb/3P |
300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
2N7002ZWG-AL3-R
|
164Kb/3P |
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
2SC4774G-AL3-R
|
240Kb/4P |
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA)
|
|
2SK2751G-AL3-R
|
207Kb/4P |
N-CHANNEL JUNCTION FET
|
|
3LN01MG-AL3-R
|
170Kb/3P |
N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
|
|
AZ23CKKAG-AL3-R
|
125Kb/3P |
VOLTAGE REGULATOR DOUBLE DIODES
|
|
BAS70AWG-AL3-R
|
219Kb/4P |
SCHOTTKY BARRIER DIODES
|
|
BAS70CWG-AL3-R
|
219Kb/4P |
SCHOTTKY BARRIER DIODES
|
|
BAS70SWG-AL3-R
|
219Kb/4P |
SCHOTTKY BARRIER DIODES
|
|
BAS70WG-AL3-R
|
219Kb/4P |
SCHOTTKY BARRIER DIODES
|
|
BAT54AG-AL3-R
|
178Kb/4P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAT54AWG-AL3-R
|
165Kb/3P |
SCHOTTKY BARRIER (DUAL) DIODES
|
Chinese ▼ 
English
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand