| 制造商 | 部件名 | 数据表 | 功能描述 |
Hirose Electric |
GT10-16DP-DS
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-16DP-HU
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-16DS-HU
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2022PCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2022SCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
|
GT10-2428SCF
|
177Kb/8P |
Subminiature ECU Interface Connectors
|
Goford Semiconductor |
GT1003A
|
919Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT1003AA
|
734Kb/6P |
Consumer electronic powersupply
|
|
GT1003D
|
724Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
Vishay Siliconix |
GT100DA120U
|
177Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
22-Jul-10 |
|
GT100DA120U
|
176Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
22-Jul-10 |
|
GT100DA60U
|
175Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
22-Jul-10 |
|
GT100DA60U
|
178Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
10-Jun-13 |
|
GT100DA60U
|
178Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
10-Jun-13 |
|
GT100LA120UX
|
177Kb/10P |
"Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
22-Jul-10 |
Goford Semiconductor |
GT100N04D3
|
686Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT100N04D3A
|
900Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT100N04K
|
576Kb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT100N12D5
|
1Mb/6P |
N-Channel Enhancement Mode Power MOSFET
|
|
GT100N12K
|
1Mb/6P |
N-Channel Enhancement Mode Power MOSFET
|
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