| 制造商 | 部件名 | 数据表 | 功能描述 |
 STMicroelectronics |
IRFZ40
|
181Kb/9P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Jul-1993 |
 Motorola, Inc |
IRFZ40
|
135Kb/2P |
Power Field Effect Transistors
|
 Samsung semiconductor |
IRFZ40
|
197Kb/5P |
N-CHANNEL POWER MOSFETS
|
 Vishay Siliconix |
IRFZ40
|
1Mb/8P |
Power MOSFET
21-Mar-11 |
 New Jersey Semi-Conduct... |
IRFZ40
|
912Kb/3P |
N-CHANNEL POWER MOSFETS
|
 Inchange Semiconductor ... |
IRFZ40
|
61Kb/2P |
isc Silicon NPN Power Transistor
|
 ARTSCHIP ELECTRONICS CO... |
IRFZ40
|
847Kb/5P |
N-CHANNEL POWER MOSFETS
|
 SHENZHEN DOINGTER SEMIC... |
IRFZ40
|
1,014Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
 List of Unclassifed Man... |
IRFZ40
|
2Mb/31P |
SEMICONDUCTORS
|
 Vishay Siliconix |
IRFZ40
|
1Mb/9P |
Power MOSFET
21-Mar-11 |
|
IRFZ40
|
793Kb/9P |
Power MOSFET
25-Oct-2021 |
 STMicroelectronics |
IRFZ40FI
|
181Kb/9P |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Jul-1993 |
 Inchange Semiconductor ... |
IRFZ40FI
|
60Kb/2P |
isc Silicon NPN Power Transistor
|
 Vishay Siliconix |
IRFZ40PBF
|
1Mb/8P |
Power MOSFET
21-Mar-11 |
|
IRFZ40PBF
|
1Mb/9P |
Power MOSFET
21-Mar-11 |
|
IRFZ40
|
793Kb/9P |
Power MOSFET
25-Oct-2021 |
 NXP Semiconductors |
IRFZ44
|
64Kb/8P |
N-channel enhancement mode TrenchMOS transistor
February 1999 Rev 1.000 |
 International Rectifier |
IRFZ44
|
100Kb/8P |
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
|
 Samsung semiconductor |
IRFZ44
|
197Kb/5P |
N-CHANNEL POWER MOSFETS
|
 Vishay Siliconix |
IRFZ44
|
1Mb/8P |
Power MOSFET
07-Jul-08 |