| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
2N7002DWL-AL6-R
|
291Kb/6P |
300mA, 60V DUAL N-CHANNEL POWER MOSFET
|
|
2N7002DWL-AL6-R
|
306Kb/6P |
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET
|
|
2N7002ZDWL-AL6-R
|
177Kb/3P |
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
2N7002ZDWL-AL6-R
|
176Kb/3P |
300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
|
|
BAT54ADWL-AL6-R
|
148Kb/2P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAT54CDWL-AL6-R
|
150Kb/2P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAT54DWL-AL6-R
|
150Kb/2P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAT54SDWL-AL6-R
|
150Kb/2P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAT54TDWL-AL6-R
|
148Kb/2P |
SCHOTTKY BARRIER (DUAL) DIODES
|
|
BAV99L-AL6-R
|
187Kb/4P |
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
BAV99L-AL6-R
|
98Kb/4P |
HIGH CONDUCTANCE ULTRA FAST DIODE
|
|
BC847BSL-AL6-R
|
111Kb/3P |
NPN GENERAL PURPOSE AMPLIFIER
|
|
BSS84ZWL-AL6-R
|
145Kb/3P |
0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
IMZ2AL-AL6-R
|
110Kb/3P |
POWER MANAGEMENT
|
|
IMZ2AL-AL6-R
|
106Kb/3P |
POWER MANAGEMENT DUAL TRANSISTOR)
|
|
MMDT2222AL-AL6-R
|
138Kb/3P |
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
|
MMDT2227L-AL6-R
|
127Kb/3P |
NPN & PNP GENERAL PURPOSE AMPLIFIER
|
|
MMDT3904L-AL6-R
|
138Kb/3P |
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
|
MMDT3906L-AL6-R
|
121Kb/4P |
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
|
MMDT3946L-AL6-R
|
136Kb/5P |
COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|