| 制造商 | 部件名 | 数据表 | 功能描述 |
 TOKO, Inc |
LL1608FS1N2J
|
378Kb/2P |
Multilayer Chip Inductors
|
|
LL1608FS1N2K
|
378Kb/2P |
Multilayer Chip Inductors
|
|
LL1608FS1N2S
|
378Kb/2P |
Multilayer Chip Inductors
|
|
LL1608FSL
|
377Kb/2P |
Multilayer Chip Inductors
|
 NXP Semiconductors |
LL1608--FH3N9S
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
LL1608--FH5N6S
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
LL1608--FH6N8S
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
LL1608--FH8N2S
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
LL1608--FSL18NJ
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 TOKO, Inc |
LL1608-F10N
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F12N
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F15N
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F15NK
|
362Kb/2P |
Laminated ceramic allows high SRF
|
|
LL1608-F18N
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F1N2S
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F1N2S
|
362Kb/2P |
Laminated ceramic allows high SRF
|
|
LL1608-F1N5S
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F1N5S
|
362Kb/2P |
Laminated ceramic allows high SRF
|
|
LL1608-F1N8S
|
362Kb/2P |
STANDARD PARTS SELECTION GUIDE
|
|
LL1608-F1N8S
|
362Kb/2P |
Laminated ceramic allows high SRF
|