| 制造商 | 部件名 | 数据表 | 功能描述 |
Seme LAB |
MG6330
|
585Kb/4P |
SILICON EPITAXIAL PLANAR NPN TRANSISTOR
|
|
MG6330-R
|
585Kb/4P |
SILICON EPITAXIAL PLANAR NPN TRANSISTOR
|
|
MG6331
|
588Kb/5P |
SILICON EPITAXIAL PLANAR NPN TRANSISTOR
|
List of Unclassifed Man... |
MG6333
|
553Kb/2P |
SILICON EPTIAXIAL PLANAR NPN TRANSISTOR
|
Rohm |
MG6303WZ
|
246Kb/4P |
650V 30A Insulated Gate Bipolar Transistor
|
|
MG6304WZ
|
245Kb/4P |
650V 40A Insulated Gate Bipolar Transistor
|
|
MG6305WZ
|
245Kb/4P |
650V 50A Insulated Gate Bipolar Transistor
|
|
MG6306WZ
|
246Kb/4P |
650V 20A Insulated Gate Bipolar Transistor
|
|
MG6307WZ
|
246Kb/4P |
650V 25A Insulated Gate Bipolar Transistor
|
|
MG6308WZ
|
246Kb/4P |
650V 75A Insulated Gate Bipolar Transistor
|
Micro Electronics |
MG63DA
|
43Kb/1P |
FLANGELESS RECTANGULAR BAR LED LAMP
|
OKI electronic componet... |
MG63P
|
267Kb/22P |
0.25關m Embedded DRAM/ Customer Structured Arrays
|
Willow Technologies Ltd |
MG60
|
307Kb/1P |
Film Resistors
|
Riedon Powertron |
MG60
|
241Kb/1P |
Film Resistors
|
Toshiba Semiconductor |
MG600
|
319Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
MG600J1US51
|
319Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
|
MG600J2YS60A
|
191Kb/9P |
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Mitsubishi Electric Sem... |
MG600J2YS61A
|
219Kb/13P |
High Power Switching Applications Motor Control Applications
|
Powerex Power Semicondu... |
MG600J2YS61A
|
322Kb/6P |
Dual IGBTMOD
|
Toshiba Semiconductor |
MG600Q1US41
|
288Kb/6P |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
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