| 制造商 | 部件名 | 数据表 | 功能描述 |
SHENZHEN DOINGTER SEMIC... |
NB003PG
|
1Mb/5P |
P-Channel MOSFET uses advanced trench technology
|
Kyocera Kinseki Corpota... |
NB06HA15
|
920Kb/7P |
Schottky Barrier Diode
|
|
NB06HA20
|
931Kb/7P |
Schottky Barrier Diode
|
|
NB06HSA065
|
1Mb/7P |
Schottky Barrier Diode
|
|
NB06HSA08
|
1Mb/7P |
Schottky Barrier Diode
|
|
NB06HSA12
|
993Kb/7P |
Schottky Barrier Diode
|
Nihon Inter Electronics... |
NB06HSA12
|
402Kb/1P |
Schottky Barrier Diode
|
National Instruments Co... |
NB06HSA12
|
402Kb/1P |
SBD
|
Kyocera Kinseki Corpota... |
NB06QSA035
|
1Mb/7P |
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA035
|
253Kb/1P |
SBD
|
Kyocera Kinseki Corpota... |
NB06QSA045
|
985Kb/7P |
Schottky Barrier Diode
|
Nihon Inter Electronics... |
NB06QSA045
|
304Kb/1P |
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA045
|
304Kb/1P |
SBD
|
Kyocera Kinseki Corpota... |
NB06QSA065
|
1,005Kb/7P |
Schottky Barrier Diode
|
Nihon Inter Electronics... |
NB06QSA065
|
273Kb/1P |
Schottky Barrier Diode
|
National Instruments Co... |
NB06QSA065
|
273Kb/1P |
SBD
|
TE Connectivity Ltd |
NB08994001
|
284Kb/4P |
2063438-1
02/03/2023 |
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