| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
2NNPP06L-S08-R
|
221Kb/6P |
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
|
|
2NNPP06L-S08-T
|
221Kb/6P |
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
|
 ODU GmbH & Co.KG |
A16N0P-P06L230-0000
|
233Kb/1P |
PLUG, SOLDER
|
 A POWER MICROELECTRONIC... |
AP3P06LI
|
1Mb/7P |
-60V P-Channel Enhancement Mode MOSFET
|
|
AP6P06LI
|
780Kb/7P |
-60V P-Channel Enhancement Mode MOSFET
|
 Shenzhen Foster Semicon... |
FIR4P06LTG
|
2Mb/7P |
P-Channel Enhancement Mode Power MOSFET
|
 Goford Semiconductor |
G05P06LA
|
775Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
G1K1P06LH
|
826Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
G1K1P06LL
|
796Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
G700P06LL
|
875Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
G700P06LLA
|
839Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
|
G800P06LL
|
813Kb/6P |
P-Channel Enhancement Mode Power MOSFET
|
 HUAYI MICROELECTRONICS ... |
HYG120P06LR1D
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
|
HYG120P06LR1U
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
|
HYG120P06LR1V
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
|
HYG210P06LQ1C2
|
722Kb/10P |
Single P-Channel Enhancement Mode MOSFET
|
|
HYG210P06LQ1D
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
|
HYG210P06LQ1U
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
|
HYG210P06LQ1V
|
1Mb/11P |
P-Channel Enhancement Mode MOSFET
|
 Infineon Technologies A... |
IPB110P06LM
|
939Kb/11P |
OptiMOSTM Power Transistor, -60 V
Rev.2.0,2019-04-01 |