| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PTFB072707FHV1R0
|
917Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2016-06-15 |
|
PTFB072707FHV1R0XTMA1
|
917Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2016-06-15 |
|
PTFB072707FHV1R250
|
917Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2016-06-15 |
|
PTFB072707FHV1R250XTMA1
|
917Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2016-06-15 |
|
PTFB082817FH
|
667Kb/13P |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz
Rev. 02, 2010-12-13 |
|
PTFB090901EA
|
226Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
Rev. 04, 2012-02-23 |
|
PTFB090901EA
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
 Cree, Inc |
PTFB090901EA
|
710Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 ??960 MHz
|
 Infineon Technologies A... |
PTFB090901EAV2R0
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901EAV2R0XTMA1
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901EAV2R250
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901EAV2R250XTMA1
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901EFA
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901FA
|
226Kb/14P |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
Rev. 04, 2012-02-23 |
|
PTFB090901FA
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901FAV2R0
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901FAV2R0XTMA1
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901FAV2R250
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB090901FAV2R250XTMA1
|
1Mb/14P |
Thermally-Enhanced High Power RF LDMOS FETs
Rev. 05.2, 2016-06-09 |
|
PTFB091507FH
|
1Mb/13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
Rev. 03, 2011-03-14 |