| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXAC182002FCV1R0
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC182002FCV1R0XTMA1
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC182002FCV1R250
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC182002FCV1R250XTMA1
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC182002FC
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.2, 2015-06-05 |
|
PXAC182002FC
|
1Mb/8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC182908FV
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2015-07-29 |
 Cree, Inc |
PXAC182908FV
|
515Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
|
 Infineon Technologies A... |
PXAC182908FV
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2015-07-29 |
|
PXAC180602MD
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2015-06-18 |
|
PXAC180602MD
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2015-06-18 |
|
PXAC192908FV
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.2, 2015-07-14 |
 Cree, Inc |
PXAC192908FV
|
525Kb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
|
 Infineon Technologies A... |
PXAC192908FVV1R0
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC192908FVV1R0XTMA1
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC192908FVV1R250
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC192908FVV1R250XTMA1
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC192908FV
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.2, 2015-07-14 |
|
PXAC192908FV
|
1Mb/9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 ??1995 MHz
Rev. 02.3, 2016-06-17 |
|
PXAC200902FC
|
489Kb/10P |
Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz
Rev. 02.1, 2016-02-11 |