PXAC201202FC-V2-R0 数据表, PDF

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAC201202FCV2R0	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R0XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201602FC	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
Cree, Inc	PXAC201602FC	529Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
Infineon Technologies A...	PXAC201602FCV1R0	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R0XTMA1	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R250	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC201602FCV1R250XTMA1	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC200902FC	489Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
Cree, Inc	PXAC200902FC	600Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
Infineon Technologies A...	PXAC203302FV	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2015-06-09
Cree, Inc	PXAC203302FV	436Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz
Infineon Technologies A...	PXAC203302FVV1R0	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R0XTMA1	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R250	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R250XTMA1	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FV	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2015-06-09
	PXAC203302FV	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22

PXAC201202FC-V2-R0 数据表, PDF

PXAC201202FC Datasheet ,PDF

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