| 制造商 | 部件名 | 数据表 | 功能描述 |
Mitsubishi Electric Sem... |
RM1200DB-34S
|
74Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM1200DB-66S
|
77Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM1200DG-66S
|
79Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
|
RM1200DG-90F
|
556Kb/5P |
HIGH POWER SWITCHING USE INSULATED TYPE
|
Micro Commercial Compon... |
RM1200E
|
71Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM1200E
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM1200E
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM1200E
|
244Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
|
RM1200E
|
265Kb/3P |
500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 Volts
|
Mitsubishi Electric Sem... |
RM1200HE-66S
|
68Kb/4P |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Rectron Semiconductor |
RM120N30D3
|
236Kb/7P |
N-Channel Enhancement MOSFET
2020-12/59 REV:O |
|
RM120N30DF
|
227Kb/6P |
N-Channel Super Trench Power MOSFET
|
|
RM120N30T2
|
217Kb/8P |
N-Channel Enhancement Mode Power MOSFET
2018-02/15 REV:O |
|
RM120N40LD
|
714Kb/7P |
N-Channel Enhancement Mode Power MOSFET
2022-03/59 REV:B |
|
RM120N40LD
|
734Kb/9P |
N-Channel Enhancement Mode Power MOSFET
2022-03/59 REV:A |
|
RM120N40LDV
|
734Kb/9P |
N-Channel Enhancement Mode Power MOSFET
2022-03/59 REV:A |
|
RM120N40T2
|
219Kb/7P |
N-Channel Enhancement Mode Power MOSFET
|
|
RM120N85AT2
|
1Mb/7P |
N-Channel Super Trench Power MOSFET
2020-07/59 REV:O |
|
RM120N85T2
|
202Kb/7P |
N-Channel Super Trench Power MOSFET
|
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