| 制造商 | 部件名 | 数据表 | 功能描述 |
 Freescale Semiconductor... |
RO4350
|
813Kb/16P |
RF Power Field Effect Transistor
|
 NXP Semiconductors |
RO4350
|
461Kb/13P |
RF Power LDMOS Transistor
Rev. 2, 3/2013 |
 Freescale Semiconductor... |
RO4350B
|
868Kb/13P |
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
|
RO4350B
|
985Kb/21P |
RF Power LDMOS Transistors
|
|
RO4350B
|
948Kb/19P |
RF Power LDMOS Transistors
|
|
RO4350B
|
437Kb/15P |
RF Power LDMOS Transistors
|
|
RO4350B
|
1Mb/20P |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
 RFHIC |
RO4350B
|
295Kb/7P |
GaN Doherty Hybrid Amplifier
|
|
RO4350B
|
581Kb/6P |
GaN Doherty Hybrid Amplifier
|
|
RO4350B
|
586Kb/6P |
GaN Doherty Hybrid Amplifier
|
|
RO4350B
|
586Kb/6P |
GaN Doherty Hybrid Amplifier
|
 Hongfa Technology |
RO4350B
|
1Mb/8P |
GaN Hybrid Power Amplifier
|
 NXP Semiconductors |
RO4350B
|
673Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 5/2010 |
|
RO4350B
|
576Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 10/2009 |
|
RO4350B
|
393Kb/18P |
RF LDMOS Wideband Integrated Power Amplifiers
Rev. 0, 11/2009 |
|
RO4350B
|
377Kb/13P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 3, 12/2013 |
|
RO4350B
|
672Kb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 2, 12/2013 |
|
RO4350B
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
|
RO4350B
|
474Kb/16P |
RF Power LDMOS Transistor
Rev. 1, 1/2013 |
 Pulse A Technitrol Comp... |
RO4910NF
|
503Kb/3P |
All NMO mount antennas listed in this catalog section require the NMOHF-style
|