| 制造商 | 部件名 | 数据表 | 功能描述 |
SeCoS Halbleitertechnol... |
SSP45N10
|
581Kb/4P |
N-Channel Enhancement Mode MOSFET
|
|
SSP45N10
|
581Kb/4P |
N-Channel Enhancement Mode MOSFET
|
Fairchild Semiconductor |
SSP45N20
|
914Kb/10P |
200V N-Channel MOSFET
|
|
SSP45N20B
|
914Kb/10P |
200V N-Channel MOSFET
|
Inchange Semiconductor ... |
SSP4N45
|
279Kb/2P |
isc N-Channel MOSFET Transistor
|
|
SSP4N50
|
279Kb/2P |
isc N-Channel MOSFET Transistor
|
|
SSP4N55
|
279Kb/2P |
isc N-Channel MOSFET Transistor
|
VBsemi Electronics Co.,... |
SSP4N60
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Inchange Semiconductor ... |
SSP4N60
|
280Kb/2P |
isc N-Channel MOSFET Transistor
|
VBsemi Electronics Co.,... |
SSP4N60A
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Fairchild Semiconductor |
SSP4N60AS
|
256Kb/7P |
Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
SSP4N60AS
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Inchange Semiconductor ... |
SSP4N60AS
|
280Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
SSP4N60B
|
890Kb/10P |
600V N-Channel MOSFET
|
VBsemi Electronics Co.,... |
SSP4N60B
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
Samsung semiconductor |
SSP4N70
|
296Kb/5P |
improved inductive ruggedness
|
Inchange Semiconductor ... |
SSP4N70
|
279Kb/2P |
isc N-Channel MOSFET Transistor
|
Samsung semiconductor |
SSP4N80
|
296Kb/5P |
improved inductive ruggedness
|
Inchange Semiconductor ... |
SSP4N80A
|
348Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
SSP4N80AS
|
192Kb/7P |
Avalanche Rugged Technology
|
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