| 制造商 | 部件名 | 数据表 | 功能描述 |
 Eravant |
STN-SF415-04-D2
|
386Kb/2P |
V-Band Network Analyzer Extender
Rev. 1.0 |
|
STN-SF610-00-D2
|
403Kb/2P |
W-Band Network Analyzer Extender
Rev. 1.0 |
|
STN-SF612-03-D2
|
299Kb/3P |
E-Band Scalar Network Analyzer Extender
Rev. 1.2 |
|
STN-SF908-00-D2
|
402Kb/2P |
F-Band Network Analyzer Extender
Rev. 1.0 |
 STMicroelectronics |
STN0214
|
133Kb/7P |
Very high voltage NPN power transistor
02-Feb-2012 |
 celduc-relais |
STN07105
|
86Kb/2P |
AC/DC Solid State Relay
|
 Stanson Technology |
STN1012
|
285Kb/6P |
Dual N Channel Enhancement Mode MOSFET
|
 List of Unclassifed Man... |
STN1110
|
612Kb/24P |
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/MM
|
612Kb/24P |
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/SO
|
612Kb/24P |
Multiprotocol OBD to UART Interpreter
|
|
STN1110-I/SP
|
612Kb/24P |
Multiprotocol OBD to UART Interpreter
|
 Stanson Technology |
STN1304
|
240Kb/6P |
N Channel Enhancement Mode MOSFET
|
 STMicroelectronics |
STN1802
|
51Kb/4P |
HIGH CURRENT GAIN CHARACTERISTIC
Mar-2003 |
 Stanson Technology |
STN1810
|
966Kb/7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
 SHENZHEN DOINGTER SEMIC... |
STN1810
|
1Mb/6P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
STN1810
|
469Kb/9P |
N-Channel 100 V (D-S) MOSFET
|
 Stanson Technology |
STN18T20
|
285Kb/4P |
N Channel Enhancement Mode MOSFET
|
 SemiWell Semiconductor |
STN1A60
|
535Kb/6P |
Bi-Directional Triode Thyristor
|
 Tiger Electronic Co.,Lt... |
STN1A60
|
128Kb/1P |
Silicon Bidirectional Triode Thyristors
|
 Shenzhen Winsemi Microe... |
STN1A60
|
353Kb/5P |
Logic Level Bi-Directional Triode Thyristor
|