| 制造商 | 部件名 | 数据表 | 功能描述 |
Zowie Technology Corpor... |
UGF30A
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30B
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30D
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30F
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30G
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30J
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
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UGF30K
|
62Kb/2P |
SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
|
TAITRON Components Inco... |
UGF3AB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
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UGF3BB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
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UGF3DB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
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UGF3GB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
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UGF3KB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
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UGF3MB
|
148Kb/4P |
3.0A Sintered Glass Passivated Ultra Fast Rectifier
|
Cree, Inc |
UGF09030
|
197Kb/7P |
30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
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UGF09030P
|
197Kb/7P |
30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
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UGF09085
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
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UGF09085F
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
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UGF09085P
|
202Kb/6P |
90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
|
Vishay Siliconix |
UGF10
|
80Kb/3P |
Dual Ultrafast Soft Recovery Rectifiers
27-Jun-03 |
|
UGF10
|
46Kb/3P |
Dual Ultrafast Soft Recovery Rectifier
03-Jul-02 |
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