| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
UT4812-S08-T
|
257Kb/6P |
DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812G-S08-R
|
239Kb/6P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
UT4812G-S08-R
|
1Mb/5P |
Dual N-Channel MOSFET uses advanced trench technology
|
 Unisonic Technologies |
UT4812L-S08-R
|
257Kb/6P |
DUAL N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT4812L-S08-R
|
1Mb/9P |
Dual N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT4812L-S08-T
|
257Kb/6P |
DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812Z
|
144Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812Z
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812ZG-S08-R
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812ZG-S08-R
|
176Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT4812ZG-S08-R
|
1Mb/9P |
Dual N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UT4812ZG-S08-T
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812ZL-S08-R
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812ZL-S08-T
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812Z
|
153Kb/4P |
30V, 6.9A DUAL N-CHANNEL ENHANCEMENT MODE
|
|
UT4812Z
|
176Kb/4P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
UT4812
|
239Kb/6P |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
UT4810D
|
201Kb/5P |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
|
|
UT4810D-S08-R
|
201Kb/5P |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
|
|
UT4810D-S08-T
|
201Kb/5P |
N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
|