| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
UTDA8024G-P28-R
|
351Kb/15P |
IC CARD INTERFACE
|
 Teledyne Technologies I... |
UTD10001001
|
141Kb/4P |
Analog Level Detectors 10 to 1000 MHz
|
|
UTD2002
|
106Kb/4P |
Threshold Detector 10 to 2000 MHz
|
|
UTD2004
|
129Kb/5P |
Threshold Detector 10 to 2000 MHz
|
 Unisonic Technologies |
UTD20N03
|
132Kb/3P |
N-CHANNEL ENHANCEMENT MODE POWER M OSFET
|
|
UTD20N03G-TN3-R
|
132Kb/3P |
N-CHANNEL ENHANCEMENT MODE POWER M OSFET
|
 VBsemi Electronics Co.,... |
UTD20N03G-TN3-R
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
UTD20N03L-TM3-T
|
1Mb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
UTD20N03L-TN3-R
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
|
UTD20N03L-TN3-T
|
1,018Kb/8P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UTD3055
|
144Kb/4P |
POWER MOSFET 12 AMPS, 60 VOLTS N?밅HANNEL DPAK
|
|
UTD3055G-TN3-R
|
144Kb/4P |
POWER MOSFET 12 AMPS, 60 VOLTS N?밅HANNEL DPAK
|
|
UTD351
|
219Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
|
UTD351-AE3-R
|
219Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
|
UTD351G-AE2-R
|
334Kb/5P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
|
UTD351G-AE3-R
|
334Kb/5P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UTD351G-AE3-R
|
482Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UTD351L-AE3-R
|
219Kb/5P |
N-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UTD351LAE3-R
|
492Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
 Unisonic Technologies |
UTD351
|
334Kb/5P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|