| 制造商 | 部件名 | 数据表 | 功能描述 |
Vishay Siliconix |
VB10150C
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08 |
|
VB10150C
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C
|
723Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
16-Aug-13 |
Inchange Semiconductor ... |
VB10150C-E3
|
314Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB10150C-E3-4W
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-E3-8W
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08 |
|
VB10150C-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-E3/8W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08 |
|
VB10150C-E3/8W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-M3
|
88Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
30-Aug-13 |
|
VB10150C-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-Jun-2018 |
Inchange Semiconductor ... |
VB10150C-M3
|
314Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB10150C-M3
|
78Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier
30-Aug-13 |
|
VB10150C-M3
|
102Kb/4P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-Jun-2018 |
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