| 制造商 | 部件名 | 数据表 | 功能描述 |
Vishay Siliconix |
VB40100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C
|
102Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
20-Jun-2018 |
Inchange Semiconductor ... |
VB40100C
|
314Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB40100C-E3
|
160Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
14-Nov-14 |
|
VB40100C-E3
|
155Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
14-Nov-14 |
|
VB40100C-E3
|
1Mb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
19-Jun-2018 |
Inchange Semiconductor ... |
VB40100C-E3
|
314Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB40100C-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C-E3/4W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
19-Oct-11 |
|
VB40100C-E3/8W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
26-May-08 |
|
VB40100C-E3/8W
|
157Kb/5P |
Dual High-Voltage Trench MOS barrier Schottky Rectifier
19-Oct-11 |
|
VB40100C-M3
|
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
03-Jan-17 |
|
VB40100C-M3
|
79Kb/4P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13 |
|
VB40100CHM3
|
91Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
03-Jan-17 |
|
VB40100G
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
19-May-08 |
|
VB40100G-E3
|
161Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
09-Sep-13 |
|
VB40100G-E3
|
151Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
09-Sep-13 |
|
VB40100G-E3
|
217Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
19-Jun-2018 |
Inchange Semiconductor ... |
VB40100G-E3
|
315Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB40100G-E3/4W
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
19-May-08 |
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