| 制造商 | 部件名 | 数据表 | 功能描述 |
Emerson Network Power |
VS4/9
|
346Kb/8P |
VS Series
|
Faraday Technology |
VS400M
|
39Kb/2P |
SERIAL DIGITAL VIDEO PASSIVE SIGNAL SPLITTER
|
SHENZHEN DOINGTER SEMIC... |
VS40120AD
|
1Mb/6P |
N-Channel MOSFET uses advanced SGT technology
|
Vectron International, ... |
VS402
|
569Kb/6P |
Dual Frequency VCSO
|
SHENZHEN DOINGTER SEMIC... |
VS40200AD
|
2Mb/6P |
N-Channel MOSFET uses advanced SGT technology
|
|
VS40280AT
|
2Mb/6P |
N-Channel MOSFET uses advanced trench technology
|
|
VS4080AD
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
|
VS40N10AT
|
942Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
Rohm |
VS40VUA1VWM
|
1Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
|
VS40VUA1VWMTF
|
2Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
SHENZHEN DOINGTER SEMIC... |
VS4310AT
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Rohm |
VS43VLNVWM
|
1Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
|
VS43VLNVWMTF
|
2Mb/10P |
Transient Voltage Suppressor
2022/02/08_Rev.001 |
SHENZHEN DOINGTER SEMIC... |
VS4407AS
|
1Mb/5P |
P-Channel MOSFET uses advanced trench technology
|
|
VS4407BS
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
|
VS4449AS
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
New Jersey Semi-Conduct... |
VS448X
|
181Kb/2P |
2 Amp Fast Recovery Time Epoxy Bridge Rectifiers
|
VBsemi Electronics Co.,... |
VS4518AH
|
457Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
VS4518AS
|
1Mb/4P |
P-Channel MOSFET uses advanced trench technology
|
|
VS4559MS
|
3Mb/7P |
N-Chanel and P-Channel MOSFET use advanced trench technology
|
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