| 制造商 | 部件名 | 数据表 | 功能描述 |
 IXYS Corporation |
IXTF1N400
|
152Kb / 4P |
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode
|
|
IXGR16N170AH1
|
528Kb / 2P |
High Voltage IGBT with Diode Electrically Isolated Tab
|
 M.S. Kennedy Corporatio... |
MSK5115-00
|
389Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
|
MSK5116-17
|
123Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
|
MSK5116-50
|
123Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
|
MSK5131-17
|
122Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
|
MSK5131-120
|
122Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
 IXYS Corporation |
IXGR39N60B
|
519Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR40N60B
|
58Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR50N60A2U1
|
150Kb / 6P |
Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab
|