| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
NE57814
|
203Kb / 16P |
DDR memory termination regulator with standby mode and enhanced efficiency
2003 Apr 03 |
 Toshiba Semiconductor |
TA1307P
|
124Kb / 12P |
Integrated Circuit For Standby Power-Supply Control
|
 Panasonic Semiconductor |
LC-RA1212
|
62Kb / 1P |
For main and standby power supplies.
|
 Advanced Monolithic Sys... |
AMS2263
|
776Kb / 12P |
Extended Burst Mode Control For Improved
|
 Infineon Technologies A... |
ICE2QS03G
|
1Mb / 24P |
Active burst mode for low standby power
V2.3, 2014-03-06 |
 List of Unclassifed Man... |
034B
|
325Kb / 2P |
Compact design for minimum visual impact
|
 Rohm |
BM1R00001F-E2
|
2Mb / 26P |
High Efficiency and Low Standby Power CCM corresponding
|
 Hotchip Technology Co.,... |
HT2273
|
1Mb / 10P |
Burst Mode Control
|
 Panasonic Battery Group |
LC-R064R2P
|
39Kb / 1P |
For main and standby power supplies
|
|
LC-R127R2PG1
|
1Mb / 2P |
for main and standby power supplies
|