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HT2269 数据表(PDF) 10 Page - Hotchip Technology Co.,Ltd |
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HT2269 数据表(HTML) 10 Page - Hotchip Technology Co.,Ltd |
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10 / 13 page  HT2269 10/13 Current Mode PWM Controller www.hotchip.com.cn Ver1.0 OTP circuit is triggered and shutdown the MOSFET when the sensed input voltage is lower than VTH_OTP. Gate Drive HT2269 Gate is connected to the Gate of an external MOSFET for power switch control. Too weak the gate drive strength results in higher conduction and switch loss of MOSFET while too strong gate drive output compromises the EMI. Good tradeoff is achieved through the built-in totem pole gate drive design with right output strength and dead time control. The low idle loss and good EMI system design is easier to achieve with this dedicated control scheme. An internal 18V clamp is added for MOSFET gate protection at higher than expected VDD input. Protection Controls Good system reliability is achieved with HT2269’s rich protection features including Cycle- by-Cycle current limiting (OCP), Over Load Protection (OLP), over temperature protection (OTP), on-chip VDD over voltage protection (OVP, optional) and under voltage lockout (UVLO).The OCP threshold value is self adjusted lower at higher current into VIN pin. This OCP threshold slope adjustment helps to compensate the increased output power limit at higher AC voltage caused by inherent Over-Current sensing and control delay. A constant output power limit is achieved with recommended OCP compensation scheme on HT2269. At output overload condition, FB voltage is biased higher. When FB input exceeds power limit threshold value for more than 80mS, control circuit reacts to turnoff the power MOSFET. Similarly, control circuit shutdowns the power MOSFET when an Over Temperature condition is detected. HT2269 resumes the operation when temperature drops below the hysteresis value. VDD is supplied with transformer auxiliary winding output. It is clamped when VDD is higher than 35V. MOSFET is shut down when VDD drops below UVLO(enter) limit and device enters power on startup sequence thereafter. ESD protection measures The MOS circuits are electrostatic sensitive devices, they need to take the following precautions in the production and transport to effectively prevent damages to the MOS circuits due to the electrostatic discharge: 1.The operator must touchdown by the anti-static hand strap; 2.The housing of production equipments must be grounded; 3.The tools used during the assembly must be grounded; 4.Packaging or transport must be packed by conductive or antistatic packaging materials. |
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