GTRA374902FC-V1-R2 数据表(PDF) - Cree, Inc

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GTRA374902FC-V1-R2 数据表 (PDF) - Cree, Inc

GTRA374902FC-V1-R2 Datasheet PDF - Cree, Inc


部件名	GTRA374902FC-V1-R2

下载	GTRA374902FC-V1-R2 下载

文件大小	2348.33 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

GTRA374902FC-V1-R2 Datasheet (PDF)

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GTRA374902FC-V1-R2 Datasheet PDF - Cree, Inc


部件名	GTRA374902FC-V1-R2

下载	GTRA374902FC-V1-R2 Click to download

文件大小	2348.33 Kbytes

页	8 Pages

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

GTRA374902FC-V1-R2 数据表 (HTML) - Cree, Inc

GTRA374902FC-V1-R2 Datasheet HTML 1Page - Cree, Inc

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GTRA374902FC-V1-R2 Datasheet HTML 6Page - Cree, Inc

GTRA374902FC-V1-R2 Datasheet HTML 7Page - Cree, Inc

GTRA374902FC-V1-R2 Datasheet HTML 8Page - Cree, Inc

类似零件编号 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
WOLFSPEED, INC.	GTRA374902FC-V1-R2	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27

类似说明 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA374902FC	459Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Rev. 02.2, 2022-1-27
	GTRA412852FC	967Kb / 14P	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Rev. 03.1, 2022-1-27

关于 Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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