GTRA374902FC-V1-R2 数据表(PDF) - WOLFSPEED, INC.

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GTRA374902FC-V1-R2 数据表 (PDF) - WOLFSPEED, INC.

GTRA374902FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	GTRA374902FC-V1-R2

下载	GTRA374902FC-V1-R2 下载

文件大小	459.78 Kbytes

页	8 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

GTRA374902FC-V1-R2 Datasheet (PDF)

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GTRA374902FC-V1-R2 Datasheet PDF - WOLFSPEED, INC.


部件名	GTRA374902FC-V1-R2

下载	GTRA374902FC-V1-R2 Click to download

文件大小	459.78 Kbytes

页	8 Pages

制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

标志

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

GTRA374902FC-V1-R2 数据表 (HTML) - WOLFSPEED, INC.

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GTRA374902FC-V1-R2 产品详情

Description
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetrical Doherty design
- Main: P3dB = 220 W Typ
- Peak: P3dB = 300 W Typ
• Typical Pulsed CW performance, 3700 MHz, 48 V,
Doherty @ P3dB, 10 µs, 10% duty cycle
- Output power = 450 W
- Drain efficiency = 60%
- Gain = 11.5 dB
• Capable of handling 10:1 VSWR @ 48 V, 63 W
(WCDMA) output power
• Human Body Model Class 1A, (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

类似零件编号 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA374902FC-V1-R2	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

类似说明 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA412852FC	967Kb / 14P	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Rev. 03.1, 2022-1-27

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