GTRA374902FC-V1-R2 datasheet(1/8 Pages) WOLFSPEED

部件名	GTRA374902FC-V1-R2

功能描述	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

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制造商	WOLFSPEED [WOLFSPEED, INC.]

网页	https://www.wolfspeed.com/

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1 / 8 page

Rev. 02.2, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

GTRA374902FC

Package Types: H-37248C-4

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetrical Doherty design

- Main: P

3dB = 220 W Typ

- Peak: P

3dB = 300 W Typ

• Typical Pulsed CW performance, 3700 MHz, 48 V,

Doherty @ P

3dB, 10 µs, 10% duty cycle

- Output power = 450 W

- Drain efficiency = 60%

- Gain = 11.5 dB

• Capable of handling 10:1 VSWR @ 48 V, 63 W

(WCDMA) output power

• Human Body Model Class 1A, (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF GaN on SiC HEMT

450 W, 48 V, 3600 – 3700 MHz

Description

The GTRA374902FC is a 450-watt (P

3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

V

DD = 48 V, IDQ = 250 mA, POUT = 63 W avg, VGS(PEAK) = –5.8 V, ƒ = 3700 MHz, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

10.8

12

—

dB

Drain Efficiency

h

D

32

37.5

—

%

Adjacent Channel Power Ratio

ACPR

—

–32.5

–28.5

dBc

Output PAR @ 0.01% CCDF

OPAR

7.5

8.2

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

35

37.5

40

42.5

45

47.5

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 250 mA,

VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

gtra374902fc_g1

类似零件编号 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA374902FC-V1-R2	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz

More results

类似说明 - GTRA374902FC-V1-R2

制造商	部件名	数据表	功能描述
Cree, Inc	GTRA362002FC	233Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz
	GTRA362802FC	282Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz
	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTRA374902FC	2Mb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 ??3700 MHz
	GTRA384802FC	1Mb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz
WOLFSPEED, INC.	GTRA362002FC-V1	435Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Rev. 06, 2023-06-23
	GTRA362802FC-V1	553Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA384802FC-V1	585Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz Rev. 03.1, 2022-1-27
	GTRA364002FC	511Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Rev. 04.3, 2022-1-27
	GTRA412852FC	967Kb / 14P	Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Rev. 03.1, 2022-1-27