Electrically Isolated Back Surface

N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features

Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation


Low drain to tab capacitance(<35pF)

Low RDS (on)HDMOS™ process


Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS) rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode power  supplies

DC  choppers


AC motor control