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SCTH70N120G2V-7 数据表 (PDF) - STMicroelectronics
SCTH70N120G2V-7 Datasheet PDF - STMicroelectronics
部件名 SCTH70N120G2V-7
下载  SCTH70N120G2V-7 下载
文件大小   378.8 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK?? package

SCTH70N120G2V-7 Datasheet (PDF)

Go To PDF Page 下载 数据表
SCTH70N120G2V-7 Datasheet PDF - STMicroelectronics

部件名 SCTH70N120G2V-7
下载  SCTH70N120G2V-7 Click to download

文件大小   378.8 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK?? package

SCTH70N120G2V-7 数据表 (HTML) - STMicroelectronics


SCTH70N120G2V-7 产品详情

Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH70N120G2V-7 Product summary

Applications
■ Switching mode power supply
■ DC-DC converters
■ Industrial motor control




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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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