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SCTWA70N120G2V 数据表 (PDF) - STMicroelectronics
SCTWA70N120G2V Datasheet PDF - STMicroelectronics
部件名 SCTWA70N120G2V
下载  SCTWA70N120G2V 下载
文件大小   229.28 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A

SCTWA70N120G2V Datasheet (PDF)

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SCTWA70N120G2V Datasheet PDF - STMicroelectronics

部件名 SCTWA70N120G2V
下载  SCTWA70N120G2V Click to download

文件大小   229.28 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A

SCTWA70N120G2V 数据表 (HTML) - STMicroelectronics


SCTWA70N120G2V 产品详情

Features
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)

Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.




类似零件编号 - SCTWA70N120G2V

制造商部件名数据表功能描述
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Inchange Semiconductor ...		 SCTWA70N120G2V ISC-SCTWA70N120G2V Datasheet
294Kb / 2P		 SiC N-Channel MOSFET
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STMicroelectronics		 SCTWA70N120G2V-4 STMICROELECTRONICS-SCTWA70N120G2V-4 Datasheet
218Kb / 12P		 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
01-Jun-2021
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类似说明 - SCTWA70N120G2V

制造商部件名数据表功能描述
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STMicroelectronics		 SCTH70N120G2V-7 STMICROELECTRONICS-SCTH70N120G2V-7 Datasheet
378Kb / 14P		 Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK?? package
26-May-2021
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT020H120G3AG STMICROELECTRONICS-SCT020H120G3AG Datasheet
362Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
27-Sep-2022
SCT025H120G3AG STMICROELECTRONICS-SCT025H120G3AG Datasheet
369Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022
SCT040H120G3AG STMICROELECTRONICS-SCT040H120G3AG Datasheet
386Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022
SCT070H120G3AG STMICROELECTRONICS-SCT070H120G3AG Datasheet
396Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023
SCTH60N120G2-7AG STMICROELECTRONICS-SCTH60N120G2-7AG Datasheet
356Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021
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WOLFSPEED, INC.		 CBB021M12FM3 WOLFSPEED-CBB021M12FM3 Datasheet
2Mb / 12P		 1200 V, 21 mΩ, Silicon Carbide, Full-Bridge Module
Rev. 2, April 2023
CCB021M12FM3 WOLFSPEED-CCB021M12FM3 Datasheet
3Mb / 12P		 1200 V, 21 mΩ, Silicon Carbide, Six-Pack Module
Rev. 2, April 2023
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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