Features
• Improved ruggedness V(BR)DSS > 200 V
• Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
• POUT = 450 W typ. with 24 dB gain at 123 MHz
• In compliance with the 2002/95/EC European directive
• Moisture resistant package specifically designed to operate in extreme
environments
• Drying recommendation before soldering:
– 48 hrs at 125 °C
• Back finishing:
– Sn96.5/Ag3/Cu0.5 solder
– Base flatness < 0.2 mm
– Gold content < 0.1%
– Minimum solder thickness > 2 μm

Description
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is
intended for use in 50 V / 80 V ISM applications up to 250 MHz.
The STAC4932F1MR benefits from the latest generation of environmentally designed
packaging, ruggedized against cyclic high moisture operation and severe storage
conditions.
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or
ingested.