STAC4932F1MR datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical characteristics

TCASE = +25 °C (unless otherwise specified)

2.1

Static

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain - source Breakdown

voltage

VGS = 0 V, IDS = 100 mA

200

240

IDSS

Zero gate voltage drain

leakage current

VGS = 0 V, VDS = 100 V

IGSS

Gate - source leakage current VGS = 20 V, VDS = 0 V

250

VTH

Gate - source threshold

voltage

VDS = 10 V, ID = 250 mA

2.0

4.0

VDS(ON)

Drain - source on voltage

VGS = 10 V, ID = 10 A

3.6

GFS

Forward transconductance

VDS = 7 V, ID = 2.5 A

3.0

CISS

Input capacitance

VGS = 0 V, VDS = 50 V,

f = 1 MHz

580

COSS

Ouput capacitance

180

CRSS

Reverse transfer capacitance

Δ VTH

Gate - source threshold

voltage variation

ID = 250 mA

0.2

Δ GFS

Forward transconductance

variation

VDS = 7 V, ID = 2.5 A

0.6

2.2

Dynamic

Table 5. Dynamic (1)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

350

450

ŋD

Drain efficiency

POUT =350 W

Gps

Power gain

POUT = 350 W

1. VDD = 50 V, IDQ = 2 x 250 mA, f = 123 MHz

STAC4932F1MR

Electrical characteristics

DS9904 - Rev 2

page 3/16

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