SCT040H65G3SAG 数据表(PDF) - STMicroelectronics

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SCT040H65G3SAG 数据表 (PDF) - STMicroelectronics

SCT040H65G3SAG Datasheet PDF - STMicroelectronics


部件名	SCT040H65G3SAG

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文件大小	227.64 Kbytes

页	12 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

SCT040H65G3SAG Datasheet (PDF)

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SCT040H65G3SAG Datasheet PDF - STMicroelectronics


部件名	SCT040H65G3SAG

下载	SCT040H65G3SAG Click to download

文件大小	227.64 Kbytes

页	12 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package

SCT040H65G3SAG 数据表 (HTML) - STMicroelectronics

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SCT040H65G3SAG 产品详情

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.

Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)

类似零件编号 - SCT040H65G3SAG

制造商	部件名	数据表	功能描述
STMicroelectronics	SCT040H65G3AG	389Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package 21-Jan-2022

类似说明 - SCT040H65G3SAG

制造商	部件名	数据表	功能描述
STMicroelectronics	SCTH35N65G2V-7	378Kb / 15P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 17-Dec-2020
	SCTH100N65G2-7AG	623Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 27-Nov-2018
	SCTH35N65G2V-7AG	620Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 24-Jan-2020
	SCTH40N120G2V7AG	606Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package DS12969 - Rev 1 - April 2019
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCT018H65G3AG	390Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package 07-Oct-2022
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT040H65G3AG	389Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package 21-Jan-2022
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCTH100N120G2-AG	439Kb / 14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 23-Jul-2020

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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