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SCTH35N65G2V-7 数据表 (PDF) - STMicroelectronics
SCTH35N65G2V-7 Datasheet PDF - STMicroelectronics
部件名 SCTH35N65G2V-7
下载  SCTH35N65G2V-7 下载
文件大小   378.86 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

SCTH35N65G2V-7 Datasheet (PDF)

Go To PDF Page 下载 数据表
SCTH35N65G2V-7 Datasheet PDF - STMicroelectronics

部件名 SCTH35N65G2V-7
下载  SCTH35N65G2V-7 Click to download

文件大小   378.86 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

SCTH35N65G2V-7 数据表 (HTML) - STMicroelectronics


SCTH35N65G2V-7 产品详情

Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH35N65G2V-7 Product summary

Applications
■ Switching mode power supply
■ DC-DC converters
■ Industrial motor control




类似零件编号 - SCTH35N65G2V-7

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTH35N65G2V-7AG STMICROELECTRONICS-SCTH35N65G2V-7AG Datasheet
620Kb / 15P		 Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020
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类似说明 - SCTH35N65G2V-7

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCT040H65G3SAG STMICROELECTRONICS-SCT040H65G3SAG Datasheet
227Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package
14-Feb-2022
SCTH35N65G2V-7AG STMICROELECTRONICS-SCTH35N65G2V-7AG Datasheet
620Kb / 15P		 Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020
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SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
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243Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
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SCT018H65G3AG STMICROELECTRONICS-SCT018H65G3AG Datasheet
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SCT025H120G3AG STMICROELECTRONICS-SCT025H120G3AG Datasheet
369Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
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SCT040H65G3AG STMICROELECTRONICS-SCT040H65G3AG Datasheet
389Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
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SCTH100N120G2-AG STMICROELECTRONICS-SCTH100N120G2-AG Datasheet
439Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
23-Jul-2020
SCTH60N120G2-7AG STMICROELECTRONICS-SCTH60N120G2-7AG Datasheet
356Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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