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SCTW35N65G2VAG 数据表 (PDF) - STMicroelectronics
SCTW35N65G2VAG Datasheet PDF - STMicroelectronics
部件名 SCTW35N65G2VAG
下载  SCTW35N65G2VAG 下载
文件大小   206.14 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW35N65G2VAG Datasheet (PDF)

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SCTW35N65G2VAG Datasheet PDF - STMicroelectronics

部件名 SCTW35N65G2VAG
下载  SCTW35N65G2VAG Click to download

文件大小   206.14 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

SCTW35N65G2VAG 数据表 (HTML) - STMicroelectronics


SCTW35N65G2VAG 产品详情

Features
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Switching mode power supply
• EV chargers
• DC-DC converters
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.




类似零件编号 - SCTW35N65G2VAG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTW35N65G2V STMICROELECTRONICS-SCTW35N65G2V Datasheet
205Kb / 12P		 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package
25-Jan-2021
More results


类似说明 - SCTW35N65G2VAG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTH35N65G2V-7AG STMICROELECTRONICS-SCTH35N65G2V-7AG Datasheet
620Kb / 15P		 Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020
SCTH40N120G2V7AG STMICROELECTRONICS-SCTH40N120G2V7AG Datasheet
606Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
DS12969 - Rev 1 - April 2019
SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018
SCTW90N65G2V STMICROELECTRONICS-SCTW90N65G2V Datasheet
402Kb / 12P		 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA35N65G2VAG STMICROELECTRONICS-SCTWA35N65G2VAG Datasheet
243Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
SCTH100N120G2-AG STMICROELECTRONICS-SCTH100N120G2-AG Datasheet
439Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
23-Jul-2020
More results




关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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