数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

SCT10N120AG 数据表 (PDF) - STMicroelectronics
SCT10N120AG Datasheet PDF - STMicroelectronics
部件名 SCT10N120AG
下载  SCT10N120AG 下载
文件大小   238.62 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

SCT10N120AG Datasheet (PDF)

Go To PDF Page 下载 数据表
SCT10N120AG Datasheet PDF - STMicroelectronics

部件名 SCT10N120AG
下载  SCT10N120AG Click to download

文件大小   238.62 Kbytes
页   14 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

SCT10N120AG 数据表 (HTML) - STMicroelectronics


SCT10N120AG 产品详情

Features
• AEC-Q101 qualified
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance

Applications
• Motor drives
• EV chargers
• High voltage DC-DC converters
• Switch mode power supplies

Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s
housing in the proprietary HiP247 package, allows designers to use an industrystandard
outline with significantly improved thermal capability. These features render
the device perfectly suitable for high-efficiency and high power density applications.




类似零件编号 - SCT10N120AG

制造商部件名数据表功能描述
logo
Inchange Semiconductor ...		 SCT10N120AG ISC-SCT10N120AG Datasheet
411Kb / 2P		 N-Channel SiC MOSFET Transistor
More results


类似说明 - SCT10N120AG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCT20N120AG STMICROELECTRONICS-SCT20N120AG Datasheet
487Kb / 13P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
Rev 3 - October 2019
SCTH40N120G2V7AG STMICROELECTRONICS-SCTH40N120G2V7AG Datasheet
606Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
DS12969 - Rev 1 - April 2019
SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018
SCTW90N65G2V STMICROELECTRONICS-SCTW90N65G2V Datasheet
402Kb / 12P		 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
206Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA35N65G2VAG STMICROELECTRONICS-SCTWA35N65G2VAG Datasheet
243Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
More results




关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com