STGO30H60DLLFBAG 数据表(PDF) - STMicroelectronics

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STGO30H60DLLFBAG 数据表 (PDF) - STMicroelectronics

STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


部件名	STGO30H60DLLFBAG

下载	STGO30H60DLLFBAG 下载

文件大小	1487.47 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Datasheet (PDF)

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STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


部件名	STGO30H60DLLFBAG

下载	STGO30H60DLLFBAG Click to download

文件大小	1487.47 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG 数据表 (HTML) - STMicroelectronics

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STGO30H60DLLFBAG 产品详情

Features
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Logic level gate drive
• High-speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Low VF soft-recovery co-packaged diode
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

Applications
• Automotive injection

类似零件编号 - STGO30H60DLLFBAG

制造商	部件名	数据表	功能描述
Eravant	STG-06-S1	372Kb / 4P	D-Band Noise Figure and Gain Test Extenders Rev 1.7
Eravant	STG-08-S1	376Kb / 4P	F-Band Noise Figure and Gain Test Extenders Rev 1.7
WiTTRA Networks AB	STG-10	504Kb / 4P	WITTRA™ IOT OUT OF THE BOX ISS.1 23/03/2020
Eravant	STG-12-S1	381Kb / 4P	E-Band Noise Figure and Gain Test Extenders Rev 1.5
Eravant	STG-15-S1	380Kb / 4P	V-Band Noise Figure and Gain Test Extenders Rev 1.55

类似说明 - STGO30H60DLLFBAG

制造商	部件名	数据表	功能描述
STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 28-Jul-2015
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 04-Nov-2016
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 18-Mar-2014
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed 24-Feb-2014
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016
	STGH30H65DFB-2AG	408Kb / 17P	Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package 13-Apr-2022
	STGWA40H60DLFB	871Kb / 15P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package 03-Mar-2017

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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