Features
• AEC-Q101 qualified
• High-speed switching series
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Safer paralleling
• Tight parameter distribution
• Low thermal resistance
• Soft and very fast recovery antiparallel diode

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

Applications
• DC/DC converter for EV/HEV
• HVAC and climate control