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STH47N60DM6-2AG 数据表 (PDF) - STMicroelectronics
STH47N60DM6-2AG Datasheet PDF - STMicroelectronics
部件名 STH47N60DM6-2AG
下载  STH47N60DM6-2AG 下载
文件大小   642.25 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh™ DM6 Power MOSFET in an H2PAK-2 package

STH47N60DM6-2AG Datasheet (PDF)

Go To PDF Page 下载 数据表
STH47N60DM6-2AG Datasheet PDF - STMicroelectronics

部件名 STH47N60DM6-2AG
下载  STH47N60DM6-2AG Click to download

文件大小   642.25 Kbytes
页   15 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh™ DM6 Power MOSFET in an H2PAK-2 package

STH47N60DM6-2AG 数据表 (HTML) - STMicroelectronics


STH47N60DM6-2AG 产品详情

Features
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected

Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery
diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.

Applications
• Switching applications




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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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