Features
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tail-less switching current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
• Silicon carbide diode with no-reverse recovery charge is co-packaged in
freewheeling configuration

Applications
• Automotive converters
• Totem-pole power factor correction

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the V series IGBTs, which represent an optimum
compromise between conduction and switching losses to maximize the efficiency of
very high frequency converters. Furthermore, the positive VCE(sat) temperature
coefficient and very tight parameter distribution result in safer paralleling operation.
Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is
shown at turn-off of the SiC diode and the already minimal capacitive turn-off
behavior is independent of temperature. Its high forward surge capability ensures
good robustness during transient phases.