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TCR3DM 数据表 (PDF) - Toshiba Semiconductor

TCR3DM Datasheet PDF - Toshiba Semiconductor
部件名 TCR3DM
下载  TCR3DM 下载
文件大小   460.78 Kbytes
  14 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

TCR3DM Datasheet (PDF)

Go To PDF Page 下载 数据表
TCR3DM Datasheet PDF - Toshiba Semiconductor

部件名 TCR3DM
下载  TCR3DM Click to download

文件大小   460.78 Kbytes
  14 Pages
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor
功能描述 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit

TCR3DM 数据表 (HTML) - Toshiba Semiconductor


TCR3DM 产品详情

The TCR3DM series are CMOS general-purpose single-output
voltage regulators with an on/off control input, featuring low dropout
voltage, low output noise voltage and low inrush current.
These voltage regulators are available in fixed output voltages
between 1.0 V and 4.5 V and capable of driving up to 300 mA.
They feature over-current protection, over-temperature protection,
Inrush current protection circuit and Auto-discharge function.
The TCR3DM series are offered in the ultra small plastic mold
package DFN4 (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout
voltage of 210 mV (2.5 V output, IOUT = 300 mA) with low output
noise voltage of 38 μVrms (2.5 V output) and a load transient
response of only ΔVOUT = ±80 mV ( IOUT = 1 mA⇔300 mA, COUT
=1.0 μF).
As small ceramic input and output capacitors can be used with the
TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as
cellular phones.

Features
• Low Drop-Out voltage
VIN-VOUT = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA
VIN-VOUT = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA
VIN-VOUT = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA
• Low output noise voltage
VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz
• Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA⇔ 300 mA, COUT =1.0 μF )
• High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, IOUT = 10 mA, f =1kHz )
• Over-current protection
• Over-temperature protection
• Inrush current protection circuit
• Auto-discharge function
• Pull down connection between CONTROL and GND
• Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF )
• Ultra small package DFN4 (1.0 mm x 1.0 mm ; t 0.58 mm )




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