TCR3DM series

2017-06-20

2

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Input voltage

VIN

6.0

V

Control voltage

VCT

-0.3 to 6.0

V

Output voltage

VOUT

-0.3 to VIN + 0.3

V

Output current

IOUT

300

mA

Power dissipation

PD

420

(Note1)

mW

Operation temperature range

Topr

-40 to 85

°C

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1:

Rating at mounting on a board

Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board.

Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%

Through hole hall: diameter 0.5mm x 24

Pin Assignment (top view)

VOUT

CONTROL

GND

*Center electrode should be connected to GND or Open

VIN

1

2

4

*

3