Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. The built in collector-gate Zener exhibits
a very precise active clamping while the gateemitter Zener supplies an ESD protection.

Features
■ Low threshold voltage
■ Low on-voltage drop
■ Low gate charge
■ High current capability
■ High voltage clamping feature

Applications
■ Automotive ignition