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STGP10NB37LZ 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGP10NB37LZ
功能描述  10 A - 410 V internally clamped IGBT
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10NB37LZ 数据表(HTML) 3 Page - STMicroelectronics

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STGB10NB37LZ, STGP10NB37LZ
Electrical ratings
Doc ID 7402 Rev 4
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
VCES (clamped)
V
VECS
Emitter collector voltage (VGE = 0)
18
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at TC = 25 °C
20
A
IC
(1)
Collector current (continuous) at TC = 100 °C
10
A
ICP
(2)
2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current
40
A
ICL
(3)
3.Vclamp = 328 V, TC = 125 °C, RG=1 kΩ, VGE= 5 V
Turn-off latching current
40
A
VGE
Gate-emitter voltage
VGE (clamped)
V
PTOT
Total dissipation at TC = 25 °C
125
W
ESD(HBM)
Electrostatic sensitive discharge, human
body model applied to all three pins
(C=100 pF, R=1.5 k
Ω)
4kV
EAS
Single pulse energy at TC = 25 °C
300
mJ
Tstg
Storage temperature
– 65 to 175
°C
Tj
Operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.2
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
I
C TC
()
T
jmax
()
T
C
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
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=



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